Microstructure of Al contacts on GaAs

I. Karpov; A. Franciosi; C. Taylor; J. Roberts; Wayne L Gladfelter

doi:10.1063/1.120255

Microstructure of Al contacts on GaAs

I. Karpov
, A. Franciosi
, C. Taylor
, J. Roberts
, Wayne L Gladfelter

Chemistry (Twin Cities)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100-160°C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160-400°C) only the conventional texture is observed

Original language	English (US)
Pages (from-to)	3090-3092
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	21
DOIs	https://doi.org/10.1063/1.120255
State	Published - Nov 24 1997

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title = "Microstructure of Al contacts on GaAs",

abstract = "The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100-160°C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160-400°C) only the conventional texture is observed",

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T1 - Microstructure of Al contacts on GaAs

AU - Karpov, I.

AU - Franciosi, A.

AU - Taylor, C.

AU - Roberts, J.

AU - Gladfelter, Wayne L

PY - 1997/11/24

Y1 - 1997/11/24

N2 - The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100-160°C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160-400°C) only the conventional texture is observed

AB - The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100-160°C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160-400°C) only the conventional texture is observed

UR - https://www.scopus.com/pages/publications/0001024838

UR - https://www.scopus.com/pages/publications/0001024838#tab=citedBy

U2 - 10.1063/1.120255

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SN - 0003-6951

VL - 71

SP - 3090

EP - 3092

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Microstructure of Al contacts on GaAs

Abstract

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