Microstructure of Al contacts on GaAs

I. Karpov, A. Franciosi, C. Taylor, J. Roberts, Wayne L Gladfelter

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The microstructure of Al films deposited on GaAs(100) 2×4 surfaces through chemical vapor deposition from dimethylethylamine alane in the 100-160°C temperature range exhibits a dominant (111) texture which is not encountered in evaporated films. Such a texture has been associated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecules, while at higher temperatures (160-400°C) only the conventional texture is observed

Original languageEnglish (US)
Pages (from-to)3090-3092
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - Nov 24 1997

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