Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy

Hwanhui Yun, Koustav Ganguly, William Postiglione, Bharat Jalan, Chris Leighton, K. Andre Mkhoyan, Jong Seok Jeong

Research output: Contribution to journalArticle

Abstract

Detailed microstructure analysis of epitaxial thin films is a vital step towards understanding essential structure-property relationships. Here, a combination of transmission electron microscopy (TEM) techniques is utilized to determine in detail the microstructure of epitaxial La-doped BaSnO3 films grown on two different perovskite substrates: LaAlO3 and PrScO3. These BaSnO3 films are of high current interest due to outstanding electron mobility at ambient. The rotational disorder of low-angle grain boundaries, namely the in-plane twist and out-of-plane tilt, is visualized by conventional TEM under a two-beam condition, and the degree of twists in grains of such films is quantified by selected-area electron diffraction. The investigation of the atomic arrangement near the film-substrate interfaces, using high-resolution annular dark-field scanning TEM imaging, reveals that edge dislocations with a Burgers vector along [001] result in the out-of-plane tilt. It is shown that such TEM-based analyses provide detailed information about the microstructure of the films, which, when combined with complimentary high-resolution X-ray diffraction, yields a complete structural characterization of the films. In particular, stark differences in out-of-plane tilt on the two substrates are shown to result from differences in misfit dislocation densities at the interface, explaining a puzzling observation from X-ray diffraction.

Original languageEnglish (US)
Article number10245
JournalScientific reports
Volume8
Issue number1
DOIs
StatePublished - Dec 1 2018

Fingerprint

Transmission Electron Microscopy
X-Ray Diffraction
Electrons
Scanning Transmission Electron Microscopy
Observation

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 5

PubMed: MeSH publication types

  • Journal Article

Cite this

Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy. / Yun, Hwanhui; Ganguly, Koustav; Postiglione, William; Jalan, Bharat; Leighton, Chris; Mkhoyan, K. Andre; Jeong, Jong Seok.

In: Scientific reports, Vol. 8, No. 1, 10245, 01.12.2018.

Research output: Contribution to journalArticle

@article{ef7123cd1a6d4d1c864db1567d7f4906,
title = "Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy",
abstract = "Detailed microstructure analysis of epitaxial thin films is a vital step towards understanding essential structure-property relationships. Here, a combination of transmission electron microscopy (TEM) techniques is utilized to determine in detail the microstructure of epitaxial La-doped BaSnO3 films grown on two different perovskite substrates: LaAlO3 and PrScO3. These BaSnO3 films are of high current interest due to outstanding electron mobility at ambient. The rotational disorder of low-angle grain boundaries, namely the in-plane twist and out-of-plane tilt, is visualized by conventional TEM under a two-beam condition, and the degree of twists in grains of such films is quantified by selected-area electron diffraction. The investigation of the atomic arrangement near the film-substrate interfaces, using high-resolution annular dark-field scanning TEM imaging, reveals that edge dislocations with a Burgers vector along [001] result in the out-of-plane tilt. It is shown that such TEM-based analyses provide detailed information about the microstructure of the films, which, when combined with complimentary high-resolution X-ray diffraction, yields a complete structural characterization of the films. In particular, stark differences in out-of-plane tilt on the two substrates are shown to result from differences in misfit dislocation densities at the interface, explaining a puzzling observation from X-ray diffraction.",
author = "Hwanhui Yun and Koustav Ganguly and William Postiglione and Bharat Jalan and Chris Leighton and Mkhoyan, {K. Andre} and Jeong, {Jong Seok}",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41598-018-28520-9",
language = "English (US)",
volume = "8",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Microstructure characterization of BaSnO3 thin films on LaAlO3 and PrScO3 substrates from transmission electron microscopy

AU - Yun, Hwanhui

AU - Ganguly, Koustav

AU - Postiglione, William

AU - Jalan, Bharat

AU - Leighton, Chris

AU - Mkhoyan, K. Andre

AU - Jeong, Jong Seok

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Detailed microstructure analysis of epitaxial thin films is a vital step towards understanding essential structure-property relationships. Here, a combination of transmission electron microscopy (TEM) techniques is utilized to determine in detail the microstructure of epitaxial La-doped BaSnO3 films grown on two different perovskite substrates: LaAlO3 and PrScO3. These BaSnO3 films are of high current interest due to outstanding electron mobility at ambient. The rotational disorder of low-angle grain boundaries, namely the in-plane twist and out-of-plane tilt, is visualized by conventional TEM under a two-beam condition, and the degree of twists in grains of such films is quantified by selected-area electron diffraction. The investigation of the atomic arrangement near the film-substrate interfaces, using high-resolution annular dark-field scanning TEM imaging, reveals that edge dislocations with a Burgers vector along [001] result in the out-of-plane tilt. It is shown that such TEM-based analyses provide detailed information about the microstructure of the films, which, when combined with complimentary high-resolution X-ray diffraction, yields a complete structural characterization of the films. In particular, stark differences in out-of-plane tilt on the two substrates are shown to result from differences in misfit dislocation densities at the interface, explaining a puzzling observation from X-ray diffraction.

AB - Detailed microstructure analysis of epitaxial thin films is a vital step towards understanding essential structure-property relationships. Here, a combination of transmission electron microscopy (TEM) techniques is utilized to determine in detail the microstructure of epitaxial La-doped BaSnO3 films grown on two different perovskite substrates: LaAlO3 and PrScO3. These BaSnO3 films are of high current interest due to outstanding electron mobility at ambient. The rotational disorder of low-angle grain boundaries, namely the in-plane twist and out-of-plane tilt, is visualized by conventional TEM under a two-beam condition, and the degree of twists in grains of such films is quantified by selected-area electron diffraction. The investigation of the atomic arrangement near the film-substrate interfaces, using high-resolution annular dark-field scanning TEM imaging, reveals that edge dislocations with a Burgers vector along [001] result in the out-of-plane tilt. It is shown that such TEM-based analyses provide detailed information about the microstructure of the films, which, when combined with complimentary high-resolution X-ray diffraction, yields a complete structural characterization of the films. In particular, stark differences in out-of-plane tilt on the two substrates are shown to result from differences in misfit dislocation densities at the interface, explaining a puzzling observation from X-ray diffraction.

UR - http://www.scopus.com/inward/record.url?scp=85049624798&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85049624798&partnerID=8YFLogxK

U2 - 10.1038/s41598-018-28520-9

DO - 10.1038/s41598-018-28520-9

M3 - Article

C2 - 29980713

AN - SCOPUS:85049624798

VL - 8

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 10245

ER -