Abstract
Epitaxial InGaN with an In content of up to 89% was grown on a GaN template on a sapphire substrate using metalorganic chemical vapor deposition. The grown layer showed a bilayered structure of In- and Ga-rich InGaN parallel to the growth plane, as confirmed by both x-ray diffraction and electron microscopy. High-angle annular dark-field images revealed that pyramidal Ga-rich InGaN had formed on the top of the In-rich InGaN layer with an abrupt interface. Nucleation of the In-rich InGaN was believed to be related to threading dislocations stemming from the GaN buffer layer.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 518-522 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 38 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2009 |
Bibliographical note
Funding Information:This research was supported by the Nano R&D Program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science & Technology (2007-02589), and by a Grant from the National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as a 21st Century Frontier Program.
Keywords
- InGaN
- Nitrides
- Phase separation
- TEM
- XRD
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