Microstructural investigation of bilayer growth of In- and Ga-Rich InGaN grown by chemical vapor deposition

Jiwon Park, Sung Il Baik, Dong Su Ko, Sung Hyun Park, Euijoon Yoon, Young Woon Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Epitaxial InGaN with an In content of up to 89% was grown on a GaN template on a sapphire substrate using metalorganic chemical vapor deposition. The grown layer showed a bilayered structure of In- and Ga-rich InGaN parallel to the growth plane, as confirmed by both x-ray diffraction and electron microscopy. High-angle annular dark-field images revealed that pyramidal Ga-rich InGaN had formed on the top of the In-rich InGaN layer with an abrupt interface. Nucleation of the In-rich InGaN was believed to be related to threading dislocations stemming from the GaN buffer layer.

Original languageEnglish (US)
Pages (from-to)518-522
Number of pages5
JournalJournal of Electronic Materials
Volume38
Issue number4
DOIs
StatePublished - Apr 2009

Bibliographical note

Funding Information:
This research was supported by the Nano R&D Program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science & Technology (2007-02589), and by a Grant from the National Program for Tera-Level Nanodevices of the Korea Ministry of Science and Technology as a 21st Century Frontier Program.

Keywords

  • InGaN
  • Nitrides
  • Phase separation
  • TEM
  • XRD

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