Microstructural characterization of low temperature GaAs(111)B MBE growth by AFM and TEM

M. P. Boer, J. E. Angello, A. M. Dabiran, P. I. Cohen, W. W. Gerberich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic Force Microscopy (AFM) images are correlated with Transmission Electron Microscopy (TEM) plan-view images in a structure consisting to oriented GaAs layers grown by molecular beam epitaxy (MBE) at 500°C. We present results on the applicability of AFM, which requires short sample preparation and imaging time relative to TEM, in obtaining information on twin density and growth pits of these low temperature samples. Also, we discuss the behavior of twin boundaries by comparing plan-views and cross sectional TEM images.

Original languageEnglish (US)
Title of host publicationEvolution of Surface and Thin Film Microstructure
EditorsHarry A. Atwater, Eric Chason, Marcia H. Grabow, Max G. Lagally
PublisherPubl by Materials Research Society
Pages631-634
Number of pages4
ISBN (Print)1558991751
StatePublished - Dec 1 1993
EventProceedings of the 1992 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume280
ISSN (Print)0272-9172

Other

OtherProceedings of the 1992 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/30/9212/4/92

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