Microstructural analysis of ZnO/ZnS nanocables through Moiré fringe induced by overlapped area of ZnO and ZnS

C. W. Sun, J. S. Jeong, J. Y. Lee

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22 Scopus citations

Abstract

Unique ZnO/ZnS nanocables were synthesized by the catalyst-free simple thermal vapor transport method. Using the high-resolution transmission electron microscopy, the interface and defect structures of nanocables were investigated. The nanocables were composed of two discrete structures, which grow along [0 0 0 2] or [0 1̄ 1 0] directions in wurtzite and [2 0 0] direction in sphalerite structures. Two-dimensional Moiré fringes appeared in the core area due to a different interplanar spacing between ZnO and ZnS. In the nanocables grown along [0 0 0 2] and [0 1̄ 1 0] direction, stacking faults, which lie in (0 0 0 2) and (0 1̄ 1 0) planes were observed likewise the identical defects were also found in the (1 1 1) plane of the sphalerite structure. This work includes an in-depth discussion regarding the structure and the growth of ZnO/ZnS nanocables.

Original languageEnglish (US)
Pages (from-to)162-167
Number of pages6
JournalJournal of Crystal Growth
Volume294
Issue number2
DOIs
StatePublished - Sep 4 2006

Bibliographical note

Funding Information:
This research was supported by a grant (code ♯: 05K1501-01210) from ‘Center for Nanostructured Materials Technology’ under ‘21st Century Frontier R&D Programs’ of the Ministry of Science and Technology, Korea.

Keywords

  • A1. Heterostructure
  • A2. Moiré fringes
  • A3. Thermal vapor transport method
  • B1. ZnO/ZnS nanocable

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