Microscopic mobility in hydrogenated amorphous silicon

J. Kakalios

doi:10.1080/09500838708228744

Microscopic mobility in hydrogenated amorphous silicon

J. Kakalios

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

It has recently been proposed that the electron microscopic mobility in hydrogenated amorphous silicon is of the order of 100 cm²V^-lS^-l, and that the observed lower mobility values result from scattering by potential fluctuations arising from defect centres which have a negative effective correlation energy. We show that such potential fluctuations cannot lower the mobility to its observed value of 10 cm²V^-lS^-lMoreover, we find that the experimental evidence used to support the claim of a higher mobility can be adequately explained by the lower of the accepted values.

Original language	English (US)
Pages (from-to)	129-134
Number of pages	6
Journal	Philosophical Magazine Letters
Volume	55
Issue number	3
DOIs	https://doi.org/10.1080/09500838708228744
State	Published - Mar 1987
Externally published	Yes

Bibliographical note

Funding Information:
We gratefully acknowledge clarifying discussions with R. A. Street, M. Hack, E. A. Schiff and J. M. Marshall. This research is supported by the Solar Energy Research Institute.

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10.1080/09500838708228744

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title = "Microscopic mobility in hydrogenated amorphous silicon",

abstract = "It has recently been proposed that the electron microscopic mobility in hydrogenated amorphous silicon is of the order of 100 cm2V-lS-l, and that the observed lower mobility values result from scattering by potential fluctuations arising from defect centres which have a negative effective correlation energy. We show that such potential fluctuations cannot lower the mobility to its observed value of 10 cm2V-lS-lMoreover, we find that the experimental evidence used to support the claim of a higher mobility can be adequately explained by the lower of the accepted values.",

author = "J. Kakalios",

note = "Funding Information: We gratefully acknowledge clarifying discussions with R. A. Street, M. Hack, E. A. Schiff and J. M. Marshall. This research is supported by the Solar Energy Research Institute.",

year = "1987",

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AU - Kakalios, J.

N1 - Funding Information: We gratefully acknowledge clarifying discussions with R. A. Street, M. Hack, E. A. Schiff and J. M. Marshall. This research is supported by the Solar Energy Research Institute.

PY - 1987/3

Y1 - 1987/3

N2 - It has recently been proposed that the electron microscopic mobility in hydrogenated amorphous silicon is of the order of 100 cm2V-lS-l, and that the observed lower mobility values result from scattering by potential fluctuations arising from defect centres which have a negative effective correlation energy. We show that such potential fluctuations cannot lower the mobility to its observed value of 10 cm2V-lS-lMoreover, we find that the experimental evidence used to support the claim of a higher mobility can be adequately explained by the lower of the accepted values.

AB - It has recently been proposed that the electron microscopic mobility in hydrogenated amorphous silicon is of the order of 100 cm2V-lS-l, and that the observed lower mobility values result from scattering by potential fluctuations arising from defect centres which have a negative effective correlation energy. We show that such potential fluctuations cannot lower the mobility to its observed value of 10 cm2V-lS-lMoreover, we find that the experimental evidence used to support the claim of a higher mobility can be adequately explained by the lower of the accepted values.

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DO - 10.1080/09500838708228744

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JO - Philosophical Magazine Letters

JF - Philosophical Magazine Letters

IS - 3

ER -

Microscopic mobility in hydrogenated amorphous silicon

Abstract

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