Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer

Y. J. Wang, J. P. Wang, C. H. Hee, T. C. Chong, Vivian Ng

Research output: Contribution to journalArticle

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Abstract

On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2 = 2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j = -3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2 = Ku1 = 1 × 106 erg/cm3 and Ms1 = Ms2 = 400 emu/cm3. Hc follows the equation Hc = -0.755j/Mst1 (j<0). Why the calculated Hc values deviate from Hmax c = -j/Mst1 is discussed.

Original languageEnglish (US)
Pages (from-to)6994-6996
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number11 II
DOIs
StatePublished - Jun 1 2001

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