Micromachined SrTiO 3 single crystals as dielectrics for electrostatic doping of thin films

A. Bhattacharya; M. Eblen-Zayas; N. E. Staley; W. H. Huber; A. M. Goldman

doi:10.1063/1.1777415

Micromachined SrTiO ₃ single crystals as dielectrics for electrostatic doping of thin films

A. Bhattacharya
, M. Eblen-Zayas
, N. E. Staley
, W. H. Huber
, A. M. Goldman

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A technique for obtaining micromachined and surface treated single crystals SrTiO ₃(STO) which doubles as substrate and gate dielectric, was discussed. The surface charge densities suitable for electrostatic doping of films were obtained at low temperatures using a capacitor geometry. The off-diagonal component of strain due to the applied electric field was also measured. The nonlinear dependence of the induced carrier density on the electric field indicated the electric field dependence of the capacitance. The results show that the electrostriction saturates below the measured breakdown fields.

Original language	English (US)
Pages (from-to)	997-999
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	6
DOIs	https://doi.org/10.1063/1.1777415
State	Published - Aug 9 2004

Bibliographical note

Funding Information:
This work was supported by the National Science Foundation under Grant No. NSF/DMR-0138209 and by the University of Minnesota MRSEC (NSF/DMR-0212032). M.E.-Z. is supported by a NSF Graduate Research Fellowship.

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10.1063/1.1777415

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title = "Micromachined SrTiO 3 single crystals as dielectrics for electrostatic doping of thin films",

abstract = "A technique for obtaining micromachined and surface treated single crystals SrTiO 3(STO) which doubles as substrate and gate dielectric, was discussed. The surface charge densities suitable for electrostatic doping of films were obtained at low temperatures using a capacitor geometry. The off-diagonal component of strain due to the applied electric field was also measured. The nonlinear dependence of the induced carrier density on the electric field indicated the electric field dependence of the capacitance. The results show that the electrostriction saturates below the measured breakdown fields.",

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note = "Funding Information: This work was supported by the National Science Foundation under Grant No. NSF/DMR-0138209 and by the University of Minnesota MRSEC (NSF/DMR-0212032). M.E.-Z. is supported by a NSF Graduate Research Fellowship. ",

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AU - Bhattacharya, A.

AU - Eblen-Zayas, M.

AU - Staley, N. E.

AU - Huber, W. H.

AU - Goldman, A. M.

N1 - Funding Information: This work was supported by the National Science Foundation under Grant No. NSF/DMR-0138209 and by the University of Minnesota MRSEC (NSF/DMR-0212032). M.E.-Z. is supported by a NSF Graduate Research Fellowship.

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AB - A technique for obtaining micromachined and surface treated single crystals SrTiO 3(STO) which doubles as substrate and gate dielectric, was discussed. The surface charge densities suitable for electrostatic doping of films were obtained at low temperatures using a capacitor geometry. The off-diagonal component of strain due to the applied electric field was also measured. The nonlinear dependence of the induced carrier density on the electric field indicated the electric field dependence of the capacitance. The results show that the electrostriction saturates below the measured breakdown fields.

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