Metrology for electron-beam lithography and resist contrast at the sub-10 nm scale

Huigao Duan, Vitor R. Manfrinato, Joel K.W. Yang, Donald Winston, Bryan M. Cord, Karl K. Berggren

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies to improve the metrological accuracy and to analyze the resolution limit of electron-beam lithography. With these metrological methods, the authors found that sub-5 nm sparse features could be readily fabricated by electron-beam lithography, but dense 16 nm pitch structures were difficult to yield. Measurements of point- and line-spread functions suggested that the resolution in fabricating sub-10 nm half-pitch structures was primarily limited by the resist-development processes, meaning that the development rates depended on pattern density and/or length scale.

Original languageEnglish (US)
Pages (from-to)C6H11-C6H17
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number6
DOIs
StatePublished - Nov 2010

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