Metallic state of low-mobility silicon at high carrier density induced by an ionic liquid

Jj Nelson, A. M. Goldman

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

High-mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low-mobility samples at much higher areal carrier densities than found for samples of high mobility. We have also observed a mobility peak in metallic samples as the carrier density was increased beyond 1013cm-2.

Original languageEnglish (US)
Article number241304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number24
DOIs
StatePublished - Jun 16 2015

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