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Abstract
A line defect with metallic characteristics has been found in optically transparent BaSnO3perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level-crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO3films.
Original language | English (US) |
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Article number | eabd4449 |
Journal | Science Advances |
Volume | 7 |
Issue number | 3 |
DOIs | |
State | Published - Jan 15 2021 |
Bibliographical note
Publisher Copyright:© 2021 American Association for the Advancement of Science. All rights reserved.
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- 2 Active
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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)
Leighton, C. (PI) & Lodge, T. (CoI)
THE NATIONAL SCIENCE FOUNDATION
9/1/20 → 8/31/26
Project: Research project
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IRG-1: Ionic Control of Materials
Leighton, C. (Leader), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Mkhoyan, A. (Senior Investigator), Walter, J. (Senior Investigator) & Wang, X. (Senior Investigator)
9/1/20 → …
Project: Research project