Metal-insulator transition in the persistent photoconductor Cd1-xMnxTe: In

C. Leighton, I. Terry, P. Becla

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


Persistent photoconductivity has been used to probe the metal-insulator transition in the diluted magnetic semiconductor Cd1-xMnnTe : In. We have measured the d.c. conductivity of Cd0.92Mn0.08Te : In with tunable photogenerated carrier concentration, from the insulating phase up to ∼ 1.2nc in the same sample. In the insulating phase, Efros-Shklovskii variable range hopping conduction is observed. In the metallic phase the temperature dependence of the conductivity is adequately described by quantum corrections to the zero-temperature conductivity due to the effects of electron-electron interaction and weak localization. In the critical region the scaling theory of electron localization has been applied. We observe a critical carrier concentration ∼ 2.3 × 1017 cm-3, and a critical conductivity exponent close to one.

Original languageEnglish (US)
Pages (from-to)67-72
Number of pages6
Issue number1
StatePublished - Apr 1 1998


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