TY - JOUR
T1 - Melting of multilayer colloidal crystals confined between two walls
AU - Peng, Y.
AU - Wang, Z. R.
AU - Alsayed, A. M.
AU - Yodh, A. G.
AU - Han, Y.
PY - 2011/1/25
Y1 - 2011/1/25
N2 - Video microscopy is employed to study the melting behaviors of multilayer colloidal crystals composed of diameter-tunable microgel spheres confined between two walls. We systematically explore film thickness effects on the melting process and on the phase behaviors of single crystal and polycrystalline films. Thick films (>4 layers) are observed to melt heterogeneously, while thin films (≤4 layers) melt homogeneously, even for polycrystalline films. Grain-boundary melting dominates other types of melting processes in polycrystalline films thicker than 12 layers. The heterogeneous melting from dislocations is found to coexist with grain-boundary melting in films bewteen 5- and 12-layers. In dislocation melting, liquid nucleates at dislocations and forms lakelike domains embedded in the larger crystalline matrix; the "lakes" are observed to diffuse, interact, merge with each other, and eventually merge with large strips of liquid melted from grain boundaries. Thin film melting is qualitatively different: thin films homogeneously melt by generating many small defects which need not nucleate at grain boundaries or dislocations. For three- and four-layer thin films, different layers are observed to have the same melting point, but surface layers melt faster than bulk layers. Within our resolution, two- to four-layer films appear to melt in one step, while monolayers melt in two steps with an intermediate hexatic phase.
AB - Video microscopy is employed to study the melting behaviors of multilayer colloidal crystals composed of diameter-tunable microgel spheres confined between two walls. We systematically explore film thickness effects on the melting process and on the phase behaviors of single crystal and polycrystalline films. Thick films (>4 layers) are observed to melt heterogeneously, while thin films (≤4 layers) melt homogeneously, even for polycrystalline films. Grain-boundary melting dominates other types of melting processes in polycrystalline films thicker than 12 layers. The heterogeneous melting from dislocations is found to coexist with grain-boundary melting in films bewteen 5- and 12-layers. In dislocation melting, liquid nucleates at dislocations and forms lakelike domains embedded in the larger crystalline matrix; the "lakes" are observed to diffuse, interact, merge with each other, and eventually merge with large strips of liquid melted from grain boundaries. Thin film melting is qualitatively different: thin films homogeneously melt by generating many small defects which need not nucleate at grain boundaries or dislocations. For three- and four-layer thin films, different layers are observed to have the same melting point, but surface layers melt faster than bulk layers. Within our resolution, two- to four-layer films appear to melt in one step, while monolayers melt in two steps with an intermediate hexatic phase.
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U2 - 10.1103/PhysRevE.83.011404
DO - 10.1103/PhysRevE.83.011404
M3 - Article
AN - SCOPUS:79951688970
SN - 1539-3755
VL - 83
JO - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
JF - Physical Review E - Statistical, Nonlinear, and Soft Matter Physics
IS - 1
M1 - 011404
ER -