Medium range order and 1/f noise in hydrogenated silicon thin films

T. J. Belich; J. Kakalios

doi:10.1557/proc-715-a2.5

Medium range order and 1/f noise in hydrogenated silicon thin films

T. J. Belich, J. Kakalios

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Conference article › peer-review

Abstract

Measurements of the second spectra and correlation coefficients of conductance fluctuations are reported for a series of n-type doped a-Si:H films for which the deposition conditions are systematically varied. The non-Gaussian character of the 1/f noise is found to decrease with decreasing deposition temperature, which is also correlated with an increase in the difference between the conductivity and thermopower activation energies (the Q-function). The decrease in non-Gaussian statistics is interpreted as a decrease in the interactions between inhomogeneous current filaments due to increasing long-range disorder in the material.

Original language	English (US)
Pages (from-to)	287-292
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	715
DOIs	https://doi.org/10.1557/proc-715-a2.5
State	Published - 2002
Event	Amorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States Duration: Apr 2 2002 → Apr 5 2002

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title = "Medium range order and 1/f noise in hydrogenated silicon thin films",

abstract = "Measurements of the second spectra and correlation coefficients of conductance fluctuations are reported for a series of n-type doped a-Si:H films for which the deposition conditions are systematically varied. The non-Gaussian character of the 1/f noise is found to decrease with decreasing deposition temperature, which is also correlated with an increase in the difference between the conductivity and thermopower activation energies (the Q-function). The decrease in non-Gaussian statistics is interpreted as a decrease in the interactions between inhomogeneous current filaments due to increasing long-range disorder in the material.",

author = "Belich, {T. J.} and J. Kakalios",

year = "2002",

doi = "10.1557/proc-715-a2.5",

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pages = "287--292",

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TY - JOUR

T1 - Medium range order and 1/f noise in hydrogenated silicon thin films

AU - Belich, T. J.

AU - Kakalios, J.

PY - 2002

Y1 - 2002

N2 - Measurements of the second spectra and correlation coefficients of conductance fluctuations are reported for a series of n-type doped a-Si:H films for which the deposition conditions are systematically varied. The non-Gaussian character of the 1/f noise is found to decrease with decreasing deposition temperature, which is also correlated with an increase in the difference between the conductivity and thermopower activation energies (the Q-function). The decrease in non-Gaussian statistics is interpreted as a decrease in the interactions between inhomogeneous current filaments due to increasing long-range disorder in the material.

AB - Measurements of the second spectra and correlation coefficients of conductance fluctuations are reported for a series of n-type doped a-Si:H films for which the deposition conditions are systematically varied. The non-Gaussian character of the 1/f noise is found to decrease with decreasing deposition temperature, which is also correlated with an increase in the difference between the conductivity and thermopower activation energies (the Q-function). The decrease in non-Gaussian statistics is interpreted as a decrease in the interactions between inhomogeneous current filaments due to increasing long-range disorder in the material.

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M3 - Conference article

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JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Heterogeneous Silicon Films 2002

Y2 - 2 April 2002 through 5 April 2002

ER -

Medium range order and 1/f noise in hydrogenated silicon thin films

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