Measuring the Thickness and Potential Profiles of the Space-Charge Layer at Organic/Organic Interfaces under Illumination and in the Dark by Scanning Kelvin Probe Microscopy

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Abstract

Scanning Kelvin probe microscopy was used to measure band-bending at the model donor/acceptor heterojunction poly(3-hexylthiophene) (P3HT)/fullerene (C60). Specifically, we measured the variation in the surface potential of C60 films with increasing thicknesses grown on P3HT to produce a surface potential profile normal to the substrate both in the dark and under illumination. The results confirm a space-charge carrier region with a thickness of 10 nm, consistent with previous observations. We discuss the possibility that the domain size in bulk heterojunction organic solar cells, which is comparable to the space-charge layer thickness, is actually partly responsible for less than expected electron/hole recombination rates.

Original languageEnglish (US)
Pages (from-to)5772-5776
Number of pages5
JournalACS Applied Materials and Interfaces
Volume8
Issue number9
DOIs
StatePublished - Mar 9 2016

Keywords

  • band bending
  • charge generation layer
  • fullerene
  • polymer
  • scanning kelvin probe

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