Electron energy loss spectroscopy (EELS) was used to investigate the electronic structure of wurtzite InN. Spectra of the nitrogen K edge and the indium M4,5 edge were measured and compared with calculated partial N 2p and In 5p conduction band density of states in InN. The location of the In 4d deep valence states at about 16.3 eV below the conduction band maximum and strong interband transitions with 6.2 eV excitation energy were also found.
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