The development of growth stresses, thermal stresses and resultant residual stresses are analyzed by combining the results of x-ray diffraction measurements and a finite element method that models the distribution of those stresses. The observed normal component of residual stress in Cr//2O//3 grown on Cr at 900 degree C is compressive. The normal stresses in the coarser-grained substrate are also compressive, from which tensional in-plane stresses are calculated. The finite element analysis predicts the in-plane compressional stresses of the oxide in equilibrium with a substrate in tension. Comparison of these results with calculated thermal stresses indicates that a significant component of compressional growth stress has contributed to the observed residual stresses.
|Original language||English (US)|
|Number of pages||14|
|Journal||Proceedings - The Electrochemical Society|
|State||Published - Dec 1 1986|