MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs

J. W. Dong, J. Lu, J. Q. Xie, L. C. Chen, R. D. James, S. McKernan, C. J. Palmstrom

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (001) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.

Original languageEnglish (US)
Pages (from-to)428-432
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-3
StatePublished - May 2001

Bibliographical note

Funding Information:
This research was supported in part by Contract Nos. DARPA/ONR-N/N00014-99-1-1005, ONR-N/N00014-99-1-0233, AFOSR-F49620-98-1-0433, MRSEC Program of the National Science Foundation under Award Number DMR-9809364.


  • Heusler alloys
  • MBE
  • Ni MnIn/InAs
  • NiMnGa/GaAs
  • NiMnGe/GaAs


Dive into the research topics of 'MBE growth of ferromagnetic single crystal Heusler alloys on (0 0 1)Ga1-xInxAs'. Together they form a unique fingerprint.

Cite this