MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Yu G. Sadofyev; Y. Cao; A. Ramamoorthy; B. Naser; J. P. Bird; S. R. Johnson; Y. H. Zhang

doi:10.1109/MBE.2002.1037918

MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Yu G. Sadofyev
, Y. Cao
, A. Ramamoorthy
, B. Naser
, J. P. Bird
, S. R. Johnson
, Y. H. Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The InAs/Al(Ga)Sb quantum-well (QW) system offers a range of possibilities for application in the emerging field of spintronics. For this reason, InAs has been proposed as one of the ideal systems for realizing a novel spin-filter device structure, which exploits spin-dependent tunneling through a magnetic, quantum-point-contact, barrier.

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	379-380
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037918
State	Published - 2002
Externally published	Yes
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	9/15/02 → 9/20/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

Publisher link

10.1109/MBE.2002.1037918

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Sadofyev, Y. G., Cao, Y., Ramamoorthy, A., Naser, B., Bird, J. P., Johnson, S. R., & Zhang, Y. H. (2002). MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 379-380). Article 1037918 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037918

MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. / Sadofyev, Yu G.; Cao, Y.; Ramamoorthy, A. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 379-380 1037918 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadofyev, YG, Cao, Y, Ramamoorthy, A, Naser, B, Bird, JP, Johnson, SR & Zhang, YH 2002, MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037918, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 379-380, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037918

Sadofyev YG, Cao Y, Ramamoorthy A, Naser B, Bird JP, Johnson SR et al. MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 379-380. 1037918. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037918

Sadofyev, Yu G. ; Cao, Y. ; Ramamoorthy, A. et al. / MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 379-380 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

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MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

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