MBE growth and characterization of high-mobility InAs quantum-well systems for application in spintronics

Yu G. Sadofyev, Y. Cao, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Johnson, Y. H. Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The InAs/Al(Ga)Sb quantum-well (QW) system offers a range of possibilities for application in the emerging field of spintronics. For this reason, InAs has been proposed as one of the ideal systems for realizing a novel spin-filter device structure, which exploits spin-dependent tunneling through a magnetic, quantum-point-contact, barrier.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages379-380
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/TerritoryUnited States
CitySan Francisco
Period9/15/029/20/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

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