In this paper we present a general methodology, materials theory based modeling, for predicting device performance in technologically immature materials that can proceed relatively independently of experiment. The models incorporated within this general approach extend from a fundamental physics based, microscopic analysis to macroscopic, engineering based device models. Using this scheme, we have investigated the transport and breakdown properties of several emerging wide band gap semiconductor materials, i.e. GaN, InN, 3C-SiC, and 4H-SiC. The carrier drift velocities, mobilities, and impact ionization coefficients for these materials can be predicted using the materials theory based modeling method. Using these results, device level simulations can then be made. Here we report Monte Carlo and selfconsistent charge control modeling of GaN based devices. Comparison to experimental measurements is made when possible. Good agreement between the selfconsistent charge control model calculations and experiment is obtained. Some of the issues pertinent to heterostructure bipolar transistor modeling of GaN are discussed.
|Number of pages
|Published - Feb 1 2000
|Workshop on Wide Bandgap Bipolar Devices - Panama City Beach, FL, USA
Duration: Jan 24 1999 → Jan 28 1999
Bibliographical noteFunding Information:
The work at Georgia Tech was sponsored in part by the Office of Naval Research through contract E21-K19, by NORTEL through contract E21-5D7, by the Office of Naval Research UCSB MURI program through contract E21-K69 and by the National Science Foundation through grant ECS-9811366. Additional support at Georgia Tech was received from the Caltech President's Fund and NASA Contract NAS7-1260. The work at the University of Minnesota is supported by the National Science Foundation under grants ECS-9612539 and ECS-9811366, by The Office of Naval Research (subcontract to TRW Inc.), and by the Office of Naval Research UCSB MURI (subcontract to Georgia Tech).