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Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy
J. M. Van Hove, P. I. Cohen
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
81
Scopus citations
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Dive into the research topics of 'Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy'. Together they form a unique fingerprint.
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Keyphrases
Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
AlGaAs
100%
Action Control
100%
Mass Action
100%
Growth Rate
50%
Substrate Temperature
50%
Reflection High-energy Electron Diffraction
50%
Phase Boundary
25%
First-order Phase Transition
25%
AlxGa1-xN
25%
Intensity Oscillations
25%
Diffraction Intensity
25%
(001) Surface
25%
Structure Layer
25%
Incident Flux
25%
Action Analysis
25%
Engineering
Gallium Arsenide
100%
Aluminium Gallium Arsenide
100%
Mass Action
100%
Substrate Temperature
50%
Energy Electron Diffraction
50%
Phase Boundary
25%
Order Phase Transition
25%
Layer Structure
25%
Material Science
Molecular Beam Epitaxy
100%
Gallium Arsenide
100%
Aluminium Gallium Arsenide
100%
Reflection High-Energy Electron Diffraction
50%
Surface (Surface Science)
25%
Phase Interface
25%
Biochemistry, Genetics and Molecular Biology
Mass Action
100%
Aluminum Gallium Arsenide
100%
Electron Diffraction
100%
Reconstruction
50%
Earth and Planetary Sciences
Aluminum Gallium Arsenide
100%
Molecular Beam Epitaxy
100%
High Energy Electron
66%
Electron Diffraction
66%