Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy

J. M. Van Hove; P. I. Cohen

doi:10.1063/1.96017

Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy

J. M. Van Hove, P. I. Cohen

Electrical and Computer Engineering

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Abstract

GaAs evaporation during molecular beam epitaxy (MBE) is measured using reflection high-energy electron diffraction (RHEED). On the (001) surface there is a first-order phase transition from a 2 × 4 to 1 × 1 reconstruction. Upon crossing the phase boundary into the 1 × 1 structure, layer-by-layer evaporation of GaAs is observed. This evaporation affects the rate of growth of GaAs and Al_xGa_1-xAs by MBE. The dependence of the growth rate on substrate temperature and on As, Al, and Ga fluxes is followed by measuring RHEED intensity oscillations. The results agree quantitatively with the mass-action analysis of Heckingbottom [R. Heckingbottom, J. Vac. Sci. Technol. B 3, 572 (1985)]. At substrate temperatures above 850 K no differences between As₂ and As₄ incident fluxes are observed.

Original language	English (US)
Pages (from-to)	726-728
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	7
DOIs	https://doi.org/10.1063/1.96017
State	Published - 1985

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title = "Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy",

abstract = "GaAs evaporation during molecular beam epitaxy (MBE) is measured using reflection high-energy electron diffraction (RHEED). On the (001) surface there is a first-order phase transition from a 2 × 4 to 1 × 1 reconstruction. Upon crossing the phase boundary into the 1 × 1 structure, layer-by-layer evaporation of GaAs is observed. This evaporation affects the rate of growth of GaAs and AlxGa1-xAs by MBE. The dependence of the growth rate on substrate temperature and on As, Al, and Ga fluxes is followed by measuring RHEED intensity oscillations. The results agree quantitatively with the mass-action analysis of Heckingbottom [R. Heckingbottom, J. Vac. Sci. Technol. B 3, 572 (1985)]. At substrate temperatures above 850 K no differences between As2 and As4 incident fluxes are observed.",

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AU - Van Hove, J. M.

AU - Cohen, P. I.

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N2 - GaAs evaporation during molecular beam epitaxy (MBE) is measured using reflection high-energy electron diffraction (RHEED). On the (001) surface there is a first-order phase transition from a 2 × 4 to 1 × 1 reconstruction. Upon crossing the phase boundary into the 1 × 1 structure, layer-by-layer evaporation of GaAs is observed. This evaporation affects the rate of growth of GaAs and AlxGa1-xAs by MBE. The dependence of the growth rate on substrate temperature and on As, Al, and Ga fluxes is followed by measuring RHEED intensity oscillations. The results agree quantitatively with the mass-action analysis of Heckingbottom [R. Heckingbottom, J. Vac. Sci. Technol. B 3, 572 (1985)]. At substrate temperatures above 850 K no differences between As2 and As4 incident fluxes are observed.

AB - GaAs evaporation during molecular beam epitaxy (MBE) is measured using reflection high-energy electron diffraction (RHEED). On the (001) surface there is a first-order phase transition from a 2 × 4 to 1 × 1 reconstruction. Upon crossing the phase boundary into the 1 × 1 structure, layer-by-layer evaporation of GaAs is observed. This evaporation affects the rate of growth of GaAs and AlxGa1-xAs by MBE. The dependence of the growth rate on substrate temperature and on As, Al, and Ga fluxes is followed by measuring RHEED intensity oscillations. The results agree quantitatively with the mass-action analysis of Heckingbottom [R. Heckingbottom, J. Vac. Sci. Technol. B 3, 572 (1985)]. At substrate temperatures above 850 K no differences between As2 and As4 incident fluxes are observed.

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Mass-action control of AlGaAs and GaAs growth in molecular beam epitaxy

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