Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr2O3 Hall bar device

Zhengyang Zhao; Will Echtenkamp; Mike Street; Christian Binek; Jian Ping Wang

doi:10.1109/DRC.2016.7548495

Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr₂O₃ Hall bar device

Zhengyang Zhao
, Will Echtenkamp
, Mike Street
, Christian Binek
, Jian Ping Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Several emerging mechanisms using voltage to control the magnetism have recently been proposed because of their possible applications in energy-efficient spintronic devices [1]. Among others, one promising way to reach this goal is to use voltage to control the exchange bias of the magnetoelectric (ME) antiferromagnet Cr₂O₃ (Fig. 1) [2]. In this work, we demonstrate the ME effect in the device level using a bilayer thin film structure Cr₂O₃/[Co/Pd]n.

Original language	English (US)
Title of host publication	74th Annual Device Research Conference, DRC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509028276
DOIs	https://doi.org/10.1109/DRC.2016.7548495
State	Published - Aug 22 2016
Event	74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2016-August
ISSN (Print)	1548-3770

Other

Other	74th Annual Device Research Conference, DRC 2016
Country/Territory	United States
City	Newark
Period	6/19/16 → 6/22/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Publisher link

10.1109/DRC.2016.7548495

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Cite this

Zhao, Z., Echtenkamp, W., Street, M., Binek, C., & Wang, J. P. (2016). Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr₂O₃ Hall bar device. In 74th Annual Device Research Conference, DRC 2016 Article 7548495 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2016.7548495

Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr₂O₃ Hall bar device. / Zhao, Zhengyang; Echtenkamp, Will; Street, Mike et al.
74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7548495 (Device Research Conference - Conference Digest, DRC; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, Z, Echtenkamp, W, Street, M, Binek, C & Wang, JP 2016, Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr₂O₃ Hall bar device. in 74th Annual Device Research Conference, DRC 2016., 7548495, Device Research Conference - Conference Digest, DRC, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 74th Annual Device Research Conference, DRC 2016, Newark, United States, 6/19/16. https://doi.org/10.1109/DRC.2016.7548495

Zhao Z, Echtenkamp W, Street M, Binek C, Wang JP. Magnetoelectric device feasibility demonstration - Voltage control of exchange bias in perpendicular Cr₂O₃ Hall bar device. In 74th Annual Device Research Conference, DRC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7548495. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2016.7548495

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