Abstract
Several emerging mechanisms using voltage to control the magnetism have recently been proposed because of their possible applications in energy-efficient spintronic devices [1]. Among others, one promising way to reach this goal is to use voltage to control the exchange bias of the magnetoelectric (ME) antiferromagnet Cr2O3 (Fig. 1) [2]. In this work, we demonstrate the ME effect in the device level using a bilayer thin film structure Cr2O3/[Co/Pd]n.
Original language | English (US) |
---|---|
Title of host publication | 74th Annual Device Research Conference, DRC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781509028276 |
DOIs | |
State | Published - Aug 22 2016 |
Event | 74th Annual Device Research Conference, DRC 2016 - Newark, United States Duration: Jun 19 2016 → Jun 22 2016 |
Publication series
Name | Device Research Conference - Conference Digest, DRC |
---|---|
Volume | 2016-August |
ISSN (Print) | 1548-3770 |
Other
Other | 74th Annual Device Research Conference, DRC 2016 |
---|---|
Country/Territory | United States |
City | Newark |
Period | 6/19/16 → 6/22/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.