Magnetization-controlled spin transport in DyAs/GaAs layers

J. M. Mao, M. E. Zudov, R. R. Du, P. P. Lee, L. P. Sadwick, R. J. Hwu

Research output: Contribution to journalConference articlepeer-review

Abstract

Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and at magnetic fields up to 12 T. The measured magnetoresistances show two distinct peaks at fields around 0.2 and 2.5 T which are believed to arise from the strong spin-disorder scattering occurring at the phase transition boundaries induced by the external magnetic field. An empirical magnetic phase diagram is deduced from the temperature dependence of magnetoresistance, and the anisotropic transport properties are also presented for various magnetic field directions with respect to the current flow.

Original languageEnglish (US)
Pages (from-to)5170-5172
Number of pages3
JournalJournal of Applied Physics
Volume87
Issue number9 II
DOIs
StatePublished - May 2000
Event44th Annual Conference on Magnetism and Magnetic Materials - San Jose, CA, United States
Duration: Nov 15 1999Nov 18 1999

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