Magnetism in n-type GaMnN grown by molecular beam epitaxy

J. E. Van Nostrand; J. D. Albrecht; B. Claflin; Y. Liu; M. I. Nathan; P. P. Ruden

doi:10.1002/pssb.200541248

Magnetism in n-type GaMnN grown by molecular beam epitaxy

J. E. Van Nostrand, J. D. Albrecht, B. Claflin, Y. Liu, M. I. Nathan, P. P. Ruden

Electrical and Computer Engineering

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Abstract

We investigate the magnetic properties of a strongly n-type GaMnN alloy grown by molecular beam epitaxy. Transport, X-ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measurements are nearly constant with respect to temperature over the entire temperature range from 4 K to 300 K. Magnetometry data indicates a transition temperature at approximately 170 K with hysteresis measurements indicating magnetic behavior at least to 300 K. The role of alloy microstructure is investigated using X-ray diffraction and shows the possible presence of alternate phases giving rise to magnetization. In transport, we observe a linear Hall effect dependence on magnetic field strength.

Original language	English (US)
Pages (from-to)	3182-3188
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	242
Issue number	15
DOIs	https://doi.org/10.1002/pssb.200541248
State	Published - Dec 2005

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abstract = "We investigate the magnetic properties of a strongly n-type GaMnN alloy grown by molecular beam epitaxy. Transport, X-ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measurements are nearly constant with respect to temperature over the entire temperature range from 4 K to 300 K. Magnetometry data indicates a transition temperature at approximately 170 K with hysteresis measurements indicating magnetic behavior at least to 300 K. The role of alloy microstructure is investigated using X-ray diffraction and shows the possible presence of alternate phases giving rise to magnetization. In transport, we observe a linear Hall effect dependence on magnetic field strength.",

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AU - Van Nostrand, J. E.

AU - Albrecht, J. D.

AU - Claflin, B.

AU - Liu, Y.

AU - Nathan, M. I.

AU - Ruden, P. P.

PY - 2005/12

Y1 - 2005/12

N2 - We investigate the magnetic properties of a strongly n-type GaMnN alloy grown by molecular beam epitaxy. Transport, X-ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measurements are nearly constant with respect to temperature over the entire temperature range from 4 K to 300 K. Magnetometry data indicates a transition temperature at approximately 170 K with hysteresis measurements indicating magnetic behavior at least to 300 K. The role of alloy microstructure is investigated using X-ray diffraction and shows the possible presence of alternate phases giving rise to magnetization. In transport, we observe a linear Hall effect dependence on magnetic field strength.

AB - We investigate the magnetic properties of a strongly n-type GaMnN alloy grown by molecular beam epitaxy. Transport, X-ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measurements are nearly constant with respect to temperature over the entire temperature range from 4 K to 300 K. Magnetometry data indicates a transition temperature at approximately 170 K with hysteresis measurements indicating magnetic behavior at least to 300 K. The role of alloy microstructure is investigated using X-ray diffraction and shows the possible presence of alternate phases giving rise to magnetization. In transport, we observe a linear Hall effect dependence on magnetic field strength.

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Magnetism in n-type GaMnN grown by molecular beam epitaxy

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