Magnetism in n-type GaMnN grown by molecular beam epitaxy

J. E. Van Nostrand, J. D. Albrecht, B. Claflin, Y. Liu, M. I. Nathan, P. P. Ruden

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We investigate the magnetic properties of a strongly n-type GaMnN alloy grown by molecular beam epitaxy. Transport, X-ray diffraction, and magnetic characterizations are presented. The carrier concentration and mobility obtained by Hall effect measurements are nearly constant with respect to temperature over the entire temperature range from 4 K to 300 K. Magnetometry data indicates a transition temperature at approximately 170 K with hysteresis measurements indicating magnetic behavior at least to 300 K. The role of alloy microstructure is investigated using X-ray diffraction and shows the possible presence of alternate phases giving rise to magnetization. In transport, we observe a linear Hall effect dependence on magnetic field strength.

Original languageEnglish (US)
Pages (from-to)3182-3188
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Issue number15
StatePublished - Dec 2005


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