Magnetic tunnel junction-based spin register for nonvolatile integrated circuits

Yanfeng Jiang; Jonathan D. Harms; Jian Ping Wang

doi:10.1109/TED.2012.2211021

Magnetic tunnel junction-based spin register for nonvolatile integrated circuits

Yanfeng Jiang, Jonathan D. Harms, Jian Ping Wang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

A magnetic tunnel junction-based register with separate read and write paths is proposed in this paper. Analysis of the operation of the circuit is performed, and methods for determining the key parameters of the device are presented. The simulation of the circuit is performed in Verilog-A, and the simulation results demonstrate the operational characteristics of the circuit. This new spin-based flip flop offers a 23% reduction in the number of devices and a 23.6% reduction in its dissipated power when compared with a pure CMOS implementation with the added benefit of nonvolatility. A 4-b shifter based on the proposed spin register is presented, too.

Original language	English (US)
Article number	6293873
Pages (from-to)	2917-2923
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	11
DOIs	https://doi.org/10.1109/TED.2012.2211021
State	Published - 2012

Bibliographical note

Funding Information:
Manuscript received May 8, 2012; revised June 26, 2012; accepted July 24, 2012. Date of publication August 31, 2012; date of current version October 18, 2012. This work was supported in part by the University of Minnesota and in part by CSC-2009. The review of this paper was arranged by Editor W. Tsai.

Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.

Keywords

Magnetic tunnel junction (MTJ)
nonvolatile
spin register

Publisher link

10.1109/TED.2012.2211021

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abstract = "A magnetic tunnel junction-based register with separate read and write paths is proposed in this paper. Analysis of the operation of the circuit is performed, and methods for determining the key parameters of the device are presented. The simulation of the circuit is performed in Verilog-A, and the simulation results demonstrate the operational characteristics of the circuit. This new spin-based flip flop offers a 23% reduction in the number of devices and a 23.6% reduction in its dissipated power when compared with a pure CMOS implementation with the added benefit of nonvolatility. A 4-b shifter based on the proposed spin register is presented, too.",

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AU - Harms, Jonathan D.

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N2 - A magnetic tunnel junction-based register with separate read and write paths is proposed in this paper. Analysis of the operation of the circuit is performed, and methods for determining the key parameters of the device are presented. The simulation of the circuit is performed in Verilog-A, and the simulation results demonstrate the operational characteristics of the circuit. This new spin-based flip flop offers a 23% reduction in the number of devices and a 23.6% reduction in its dissipated power when compared with a pure CMOS implementation with the added benefit of nonvolatility. A 4-b shifter based on the proposed spin register is presented, too.

AB - A magnetic tunnel junction-based register with separate read and write paths is proposed in this paper. Analysis of the operation of the circuit is performed, and methods for determining the key parameters of the device are presented. The simulation of the circuit is performed in Verilog-A, and the simulation results demonstrate the operational characteristics of the circuit. This new spin-based flip flop offers a 23% reduction in the number of devices and a 23.6% reduction in its dissipated power when compared with a pure CMOS implementation with the added benefit of nonvolatility. A 4-b shifter based on the proposed spin register is presented, too.

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Magnetic tunnel junction-based spin register for nonvolatile integrated circuits

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