Magnetic relaxation in exchange-coupled Co/CoO bilayers measured with ac-anisotropic magnetoresistance

D. Venus, F. Hunte, I. N. Krivorotov, T. Gredig, E D Dahlberg

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Abstract

The perturbation of magnetization with a small ac field was used to measure the complex ac-susceptibility of field-cooled Co/CoO bilayers. Samples of Ta(3 nm)/Co(8 nm)/CoO(3 or 10 nm)/Cu(3nm) grown by sputter deposition on an amorphous silicon nitride substrate was also studied using a frequency of 100 Hz. The real and imaginary response showed prominent thickness-dependent peaks at the blocking temperature.

Original languageEnglish (US)
Pages (from-to)8609-8611
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 3
DOIs
StatePublished - May 15 2003

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