Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)as

B. Beschoten, P. A. Crowell, I. Malajovich, D. D. Awschalom, F. Matsukura, A. Shen, H. Ohno

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Abstract

Magnetic circular dichroism is used to investigate the evolution of ferromagnetism in the p-type magnetic semiconductor (Ga1-xMnx)As. Local Mn moments and holes produce two spectroscopically distinct contributions, whose properties reveal an antiferromagnetic Mn-hole alignment in the ferromagnetic state. These components are present in both metallic and insulating samples with different temperature and field dependences, suggesting that the holes play a more active role in mediating the ferromagnetic exchange than in traditional RKKY systems. 1999

Original languageEnglish (US)
Pages (from-to)3074-3076
Number of pages3
JournalPhysical Review Letters
Volume83
Issue number15
DOIs
StatePublished - Jan 1 1999

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    Beschoten, B., Crowell, P. A., Malajovich, I., Awschalom, D. D., Matsukura, F., Shen, A., & Ohno, H. (1999). Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)as. Physical Review Letters, 83(15), 3074-3076. https://doi.org/10.1103/PhysRevLett.83.3073