Luminescence of n-i-p-i heterostructures

R. A. Street, G. H. Döhler, J. N. Miller, P. P. Ruden

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23 Scopus citations


The luminescence properties of a new superlattice structure, called a n-i-p-i heterostructure, are described. The samples consist of GaAs quantum wells placed between alternately doped Al1-xGaxAs layers. The luminescence transitions between the quantized GaAs subbands are greatly influenced by the excitation-intensity-dependent electrostatic potential. The lowest subband luminescence transition agrees well with predictions for the ideal structure. In addition, distinct luminescence transitions from higher subbands are observed.

Original languageEnglish (US)
Pages (from-to)7043-7046
Number of pages4
JournalPhysical Review B
Issue number10
StatePublished - 1986


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