Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

P. Khalili Amiri; Z. M. Zeng; P. Upadhyaya; G. Rowlands; H. Zhao; I. N. Krivorotov; J. P. Wang; H. W. Jiang; J. A. Katine; J. Langer; K. Galatsis; K. L. Wang

doi:10.1109/LED.2010.2082487

Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

P. Khalili Amiri
, Z. M. Zeng
, P. Upadhyaya
, G. Rowlands
, H. Zhao
, I. N. Krivorotov
, J. P. Wang
, H. W. Jiang
, J. A. Katine
, J. Langer
, K. Galatsis
, K. L. Wang

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

Original language	English (US)
Article number	5623296
Pages (from-to)	57-59
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	1
DOIs	https://doi.org/10.1109/LED.2010.2082487
State	Published - Jan 2011

Bibliographical note

Funding Information:
Manuscript received September 5, 2010; revised September 23, 2010; accepted September 24, 2010. Date of publication November 9, 2010; date of current version December 27, 2010. This work was supported in part by the Defense Advanced Research Projects Agency STT-RAM Program and in part by the Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics. The review of this letter was arranged by Editor L. Selmi.

Keywords

Magnetic tunnel junctions (MTJs)
magnetoresistive random access memory (MRAM)
nonvolatile memory
spin transfer torque (STT)

Publisher link

10.1109/LED.2010.2082487

Find It

Find It at U of M Libraries

Cite this

@article{84a73bfe251a4944bb811f39bf1ed556,

title = "Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM",

abstract = "This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.",

keywords = "Magnetic tunnel junctions (MTJs), magnetoresistive random access memory (MRAM), nonvolatile memory, spin transfer torque (STT)",

author = "\{Khalili Amiri\}, P. and Zeng, \{Z. M.\} and P. Upadhyaya and G. Rowlands and H. Zhao and Krivorotov, \{I. N.\} and Wang, \{J. P.\} and Jiang, \{H. W.\} and Katine, \{J. A.\} and J. Langer and K. Galatsis and Wang, \{K. L.\}",

note = "Funding Information: Manuscript received September 5, 2010; revised September 23, 2010; accepted September 24, 2010. Date of publication November 9, 2010; date of current version December 27, 2010. This work was supported in part by the Defense Advanced Research Projects Agency STT-RAM Program and in part by the Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics. The review of this letter was arranged by Editor L. Selmi.",

year = "2011",

month = jan,

doi = "10.1109/LED.2010.2082487",

language = "English (US)",

volume = "32",

pages = "57--59",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

AU - Khalili Amiri, P.

AU - Zeng, Z. M.

AU - Upadhyaya, P.

AU - Rowlands, G.

AU - Zhao, H.

AU - Krivorotov, I. N.

AU - Wang, J. P.

AU - Jiang, H. W.

AU - Katine, J. A.

AU - Langer, J.

AU - Galatsis, K.

AU - Wang, K. L.

N1 - Funding Information: Manuscript received September 5, 2010; revised September 23, 2010; accepted September 24, 2010. Date of publication November 9, 2010; date of current version December 27, 2010. This work was supported in part by the Defense Advanced Research Projects Agency STT-RAM Program and in part by the Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics. The review of this letter was arranged by Editor L. Selmi.

PY - 2011/1

Y1 - 2011/1

N2 - This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

AB - This letter presents energy-efficient MgO based magnetic tunnel junction (MTJ) bits for high-speed spin transfer torque magnetoresistive random access memory (STT-MRAM). We present experimental data illustrating the effect of device shape, area, and tunnel-barrier thickness of the MTJ on its switching voltage, thermal stability, and energy per write operation in the nanosecond switching regime. Finite-temperature micromagnetic simulations show that the write energy changes with operating temperature. The temperature sensitivity increases with increasing write pulsewidth and decreasing write voltage. We demonstrate STT-MRAM cells with switching energies of < 1 pJ for write times of 15 ns.

KW - Magnetic tunnel junctions (MTJs)

KW - magnetoresistive random access memory (MRAM)

KW - nonvolatile memory

KW - spin transfer torque (STT)

UR - https://www.scopus.com/pages/publications/78650867845

UR - https://www.scopus.com/pages/publications/78650867845#tab=citedBy

U2 - 10.1109/LED.2010.2082487

DO - 10.1109/LED.2010.2082487

M3 - Article

AN - SCOPUS:78650867845

SN - 0741-3106

VL - 32

SP - 57

EP - 59

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 5623296

ER -

Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM

Abstract

Bibliographical note

Keywords

Publisher link

Find It

Other files and links

Fingerprint

Cite this