Low-voltage all-polymer field-effect transistor fabricated using an inkjet printing technique

An all-polymer field-effect transistor (FET) fabricated using an inkjet printing technique is presented in this paper, Poly(3,4-ethylenedioxythiophene) works as the source/drain/gate electrode material because of its good conductivity. Polypyrrole acts as the semiconducting layer. Poly(vinyl pyrrolidone) K60, an insulating polymer with a dielectric constant of 60, operates as the dielectric layer. All the polymers are diluted with deionized water, and can be printed with a piezoelectric inkjet printing system. The device functions at a depletion mode with low operation voltage. It has a field-effect mobility of 0.1 cm² · V^-1 · s^-1, an on/off ratio of 2.9 × 10³, and a subthreshold slope of 2.81V · decade^-1.