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Low-temperature plasma enhanced chemical vapor deposition of SiO
2
Shashank C. Deshmukh, Eray S. Aydil
Chemical Engineering and Materials Science
Research output
:
Contribution to journal
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Article
›
peer-review
81
Scopus citations
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2
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Keyphrases
Silica
100%
Tetraethyl Orthosilicate
100%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Low-temperature Plasma
100%
SiO2 Film
40%
Low Temperature
20%
Low Density
20%
Room Temperature
20%
Plasma Reactor
20%
Substrate Temperature
20%
Rate Measurement
20%
Ethoxy
20%
20-High
20%
Silicon Dioxide
20%
Helical Resonator
20%
Tetrahedron
20%
Transmission Infrared Spectroscopy
20%
Thermal Oxide
20%
Etching Rate
20%
Wet Etching
20%
Oxygen Discharge
20%
OH Content
20%
Variable Angle
20%
Material Science
Film
100%
Plasma-Enhanced Chemical Vapor Deposition
100%
Tetraethyl Orthosilicate
100%
Density
20%
Silicon Dioxide
20%
Resonator
20%
Oxide Compound
20%