LOW-TEMPERATURE HOPPING CONDUCTION IN STRONG ELECTRIC FIELDS. NUMERICAL EXPERIMENT ON A COMPUTER.

E. I. Levin, Boris I Shklovskii

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A report is given of the results of computer modeling of the current-voltage characteristics of a semiconductor with variable-range hopping conditions and in the low-temperature part of the epsilon //3 conduction region. An analysis is made of a model generally employed to describe hopping conduction in amorphous semiconductors: in this model the density of states near the Fermi level is assumed to be constant and the Coulomb interaction of electrons is ignored. A comparison of the calculated results with the experimental data for a-Ge, a-Sb, and a-As shows that in fact the nonohmic behavior of the current-voltage characteristics is much weaker than predicted by calculations and this clearly means that the model with a constant density of states is unsuitable for the description of such substances and that an increase in the density of states away from the Fermi level should be allowed for.

Original languageEnglish (US)
Pages (from-to)534-539
Number of pages6
JournalSoviet physics. Semiconductors
Volume18
Issue number5
StatePublished - Jan 1 1984
Externally publishedYes

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