Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

D. C. Gilmer; W. L. Gladfelter; D. G. Colombo; C. J. Taylor; J. Roberts; S. A. Campbell; H. S. Kim; G. D. Wilk; M. A. Gribelyuk

Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

D. C. Gilmer
, W. L. Gladfelter
, D. G. Colombo
, C. J. Taylor
, J. Roberts
, S. A. Campbell
, H. S. Kim
, G. D. Wilk
, M. A. Gribelyuk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO₂/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10^-8 Amp/cm².

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	MRS
Pages	45-50
Number of pages	6
Volume	495
State	Published - 1998
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997

Other

Other	Proceedings of the 1997 MRS Fall Meeting
City	Boston, MA, USA
Period	11/30/97 → 12/4/97

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Gilmer, DC, Gladfelter, WL, Colombo, DG, Taylor, CJ, Roberts, J, Campbell, SA, Kim, HS, Wilk, GD & Gribelyuk, MA 1998, Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). in Materials Research Society Symposium - Proceedings. vol. 495, MRS, pp. 45-50, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 11/30/97.

@inproceedings{96024179107d472ebffefd18706a347f,

title = "Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)",

abstract = "Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.",

author = "Gilmer, \{D. C.\} and Gladfelter, \{W. L.\} and Colombo, \{D. G.\} and Taylor, \{C. J.\} and J. Roberts and Campbell, \{S. A.\} and Kim, \{H. S.\} and Wilk, \{G. D.\} and Gribelyuk, \{M. A.\}",

year = "1998",

language = "English (US)",

volume = "495",

pages = "45--50",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "MRS",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - GEN

T1 - Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

AU - Gilmer, D. C.

AU - Gladfelter, W. L.

AU - Colombo, D. G.

AU - Taylor, C. J.

AU - Roberts, J.

AU - Campbell, S. A.

AU - Kim, H. S.

AU - Wilk, G. D.

AU - Gribelyuk, M. A.

PY - 1998

Y1 - 1998

N2 - Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

AB - Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

UR - https://www.scopus.com/pages/publications/0031637946

UR - https://www.scopus.com/pages/publications/0031637946#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:0031637946

VL - 495

SP - 45

EP - 50

BT - Materials Research Society Symposium - Proceedings

PB - MRS

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 30 November 1997 through 4 December 1997

ER -

Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

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