Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

D. C. Gilmer, W. L. Gladfelter, D. G. Colombo, C. J. Taylor, J. Roberts, S. A. Campbell, H. S. Kim, G. D. Wilk, M. A. Gribelyuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages45-50
Number of pages6
Volume495
StatePublished - 1998
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

Other

OtherProceedings of the 1997 MRS Fall Meeting
CityBoston, MA, USA
Period11/30/9712/4/97

Fingerprint

Titanium dioxide
Chemical vapor deposition
Thin films
Annealing
Low pressure chemical vapor deposition
Silicon
Deposition rates
Leakage currents
Temperature
Hydrogen
Capacitors
Permittivity
Current density
Oxygen
Crystalline materials
titanium dioxide

Cite this

Gilmer, D. C., Gladfelter, W. L., Colombo, D. G., Taylor, C. J., Roberts, J., Campbell, S. A., ... Gribelyuk, M. A. (1998). Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). In Materials Research Society Symposium - Proceedings (Vol. 495, pp. 45-50). MRS.

Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). / Gilmer, D. C.; Gladfelter, W. L.; Colombo, D. G.; Taylor, C. J.; Roberts, J.; Campbell, S. A.; Kim, H. S.; Wilk, G. D.; Gribelyuk, M. A.

Materials Research Society Symposium - Proceedings. Vol. 495 MRS, 1998. p. 45-50.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gilmer, DC, Gladfelter, WL, Colombo, DG, Taylor, CJ, Roberts, J, Campbell, SA, Kim, HS, Wilk, GD & Gribelyuk, MA 1998, Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). in Materials Research Society Symposium - Proceedings. vol. 495, MRS, pp. 45-50, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 11/30/97.
Gilmer DC, Gladfelter WL, Colombo DG, Taylor CJ, Roberts J, Campbell SA et al. Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). In Materials Research Society Symposium - Proceedings. Vol. 495. MRS. 1998. p. 45-50
Gilmer, D. C. ; Gladfelter, W. L. ; Colombo, D. G. ; Taylor, C. J. ; Roberts, J. ; Campbell, S. A. ; Kim, H. S. ; Wilk, G. D. ; Gribelyuk, M. A. / Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). Materials Research Society Symposium - Proceedings. Vol. 495 MRS, 1998. pp. 45-50
@inproceedings{96024179107d472ebffefd18706a347f,
title = "Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)",
abstract = "Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.",
author = "Gilmer, {D. C.} and Gladfelter, {W. L.} and Colombo, {D. G.} and Taylor, {C. J.} and J. Roberts and Campbell, {S. A.} and Kim, {H. S.} and Wilk, {G. D.} and Gribelyuk, {M. A.}",
year = "1998",
language = "English (US)",
volume = "495",
pages = "45--50",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "MRS",

}

TY - GEN

T1 - Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

AU - Gilmer, D. C.

AU - Gladfelter, W. L.

AU - Colombo, D. G.

AU - Taylor, C. J.

AU - Roberts, J.

AU - Campbell, S. A.

AU - Kim, H. S.

AU - Wilk, G. D.

AU - Gribelyuk, M. A.

PY - 1998

Y1 - 1998

N2 - Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

AB - Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0031637946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031637946&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031637946

VL - 495

SP - 45

EP - 50

BT - Materials Research Society Symposium - Proceedings

PB - MRS

ER -