Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

D. C. Gilmer; W. L. Gladfelter; D. G. Colombo; C. J. Taylor; J. Roberts; S. A. Campbell; H. S. Kim; G. D. Wilk; M. A. Gribelyuk

Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

D. C. Gilmer, W. L. Gladfelter, D. G. Colombo, C. J. Taylor, J. Roberts, S. A. Campbell, H. S. Kim, G. D. Wilk, M. A. Gribelyuk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO₂/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10^-8 Amp/cm².

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	MRS
Pages	45-50
Number of pages	6
Volume	495
State	Published - 1998
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997

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Other	Proceedings of the 1997 MRS Fall Meeting
City	Boston, MA, USA
Period	11/30/97 → 12/4/97

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Gilmer, DC, Gladfelter, WL, Colombo, DG, Taylor, CJ, Roberts, J, Campbell, SA, Kim, HS, Wilk, GD & Gribelyuk, MA 1998, Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV). in Materials Research Society Symposium - Proceedings. vol. 495, MRS, pp. 45-50, Proceedings of the 1997 MRS Fall Meeting, Boston, MA, USA, 11/30/97.

@inproceedings{96024179107d472ebffefd18706a347f,

title = "Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)",

abstract = "Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.",

author = "Gilmer, {D. C.} and Gladfelter, {W. L.} and Colombo, {D. G.} and Taylor, {C. J.} and J. Roberts and Campbell, {S. A.} and Kim, {H. S.} and Wilk, {G. D.} and Gribelyuk, {M. A.}",

year = "1998",

language = "English (US)",

volume = "495",

pages = "45--50",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "MRS",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - GEN

T1 - Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

AU - Gilmer, D. C.

AU - Gladfelter, W. L.

AU - Colombo, D. G.

AU - Taylor, C. J.

AU - Roberts, J.

AU - Campbell, S. A.

AU - Kim, H. S.

AU - Wilk, G. D.

AU - Gribelyuk, M. A.

PY - 1998

Y1 - 1998

N2 - Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

AB - Crystalline titanium dioxide films were deposited on silicon (100) at temperatures as low as 184 °C using the volatile molecular precursor, tetranitratotitanium(IV). Deposition rates in a low pressure chemical vapor deposition (LPCVD) reactor operated at 230 - 500 °C with a precursor vessel temperature at 22 °C were typically 4 nm/min. The effect of deposition temperature and annealing conditions on morphology are shown. Following post-deposition annealing in oxygen and hydrogen, Pt/TiO2/Si/Al capacitors were fabricated and exhibited dielectric constants in the range of 19 - 30 and leakage current densities as low as 10-8 Amp/cm2.

UR - http://www.scopus.com/inward/record.url?scp=0031637946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031637946&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0031637946

VL - 495

SP - 45

EP - 50

BT - Materials Research Society Symposium - Proceedings

PB - MRS

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 30 November 1997 through 4 December 1997

ER -

Low temperature chemical vapor deposition of titanium dioxide thin films using tetranitratotitanium (IV)

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