Low-resistivity 10 nm diameter magnetic sensors

Mazin M. Maqableh, Xiaobo Huang, Sang Yeob Sung, K. Sai Madhukar Reddy, Gregory Norby, R. H. Victora, Bethanie J.H. Stadler

Research output: Contribution to journalArticlepeer-review

67 Scopus citations


Resistivities of 5.4 μω·cm were measured in 10-nm-diameter metallic wires. Low resistance is important for interconnections of the future to prevent heating, electromigration, high power consumption, and long RC time constants. To demonstrate application of these wires, Co/Cu/Co magnetic sensors were synthesized with 20-30 ω and 19% magnetoresistance. Compared to conventional lithographically produced magnetic tunnel junction sensors, these structures offer facile fabrication and over 2 orders of magnitude lower resistances due to smooth sidewalls from in situ templated chemical growth.

Original languageEnglish (US)
Pages (from-to)4102-4109
Number of pages8
JournalNano letters
Issue number8
StatePublished - Aug 8 2012


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