LOW-POWER NON-LINEAR OPTICAL PHENOMENA IN DOPING SUPERLATTICES.

P. P. Ruden, G. H. Doehler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

We report calculations of the absorption coefficient and the refractive index of semiconductors with doping superlattices as a function of the excitation level. Results for two examples using GaAs and InAs as host materials are presented. We find that the optical properties of these systems are strongly dependent on the light intensities owing to the dependence of the built-in electric fields on the density of photoexcited charge carriers and to their long recombination lifetimes. We discuss possible applications of doping superlattices as nonlinear optical devices.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsJames D. Chadi, Walter A. Harrison
PublisherSpringer-Verlag
Pages535-538
Number of pages4
ISBN (Print)0387961089
StatePublished - Dec 1 1985

Fingerprint Dive into the research topics of 'LOW-POWER NON-LINEAR OPTICAL PHENOMENA IN DOPING SUPERLATTICES.'. Together they form a unique fingerprint.

  • Cite this

    Ruden, P. P., & Doehler, G. H. (1985). LOW-POWER NON-LINEAR OPTICAL PHENOMENA IN DOPING SUPERLATTICES. In J. D. Chadi, & W. A. Harrison (Eds.), Unknown Host Publication Title (pp. 535-538). Springer-Verlag.