Low-noise SiGe pMODFETs on sapphire with 116 GHz fmax

S. J. Koester, R. Hammond, J. O. Chu, P. M. Mooney, J. A. Ott, C. S. Webster, I. Lagnado, P. R. de la Houssaye

Research output: Contribution to journalArticlepeer-review


Several 0.1 μm gate-length pMODFETs were fabricated on high-mobility Si0.2Ge0.8/Si0.7Ge0.3 quantum wells grown on silicon-on-sapphire (SOS) wafers. These devices displayed a power gain cutoff frequency of 116 GHz, and minimum noise figure of 2.5 dB at 20 GHz.

Original languageEnglish (US)
Pages (from-to)31-32
Number of pages2
JournalAnnual Device Research Conference Digest
StatePublished - Jan 1 2000


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