Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures

Delin Zhang; Dingbin Huang; Ryan J. Wu; Dustin Lattery; Jinming Liu; Xinjun Wang; Daniel B. Gopman; K. Andre Mkhoyan; Jian Ping Wang; Xiaojia Wang

doi:10.1063/5.0016100

Low Gilbert damping and high thermal stability of Ru-seeded L1₀-phase FePd perpendicular magnetic thin films at elevated temperatures

Delin Zhang, Dingbin Huang, Ryan J. Wu, Dustin Lattery, Jinming Liu, Xinjun Wang, Daniel B. Gopman, K. Andre Mkhoyan, Jian Ping Wang, Xiaojia Wang

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Abstract

Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by an Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (Ku ∼10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a Ku ∼6.8 Merg/cm3 can be obtained with an annealing temperature of 500 °C. In addition, the Gilbert damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for the as-deposited FePd sample and from 0.006 to 0.012 for the 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices.

Original language	English (US)
Article number	082405
Journal	Applied Physics Letters
Volume	117
Issue number	8
DOIs	https://doi.org/10.1063/5.0016100
State	Published - Aug 24 2020

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Funding Information:
This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) No. HR001117S0056-FP-042 “Advanced MTJs for computation in and near random access memory,” by the ASCENT, one of the six centres in JUMP, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by the National Institute of Standards and Technology, and by the Advanced Storage Research Consortium (ASRC). Parts of the work were carried out in the Characterization Facility of the University of Minnesota, which receives partial support from NSF through the MRSEC program (No. DMR-1420013).

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@article{3ea431ff2dcb4474abe343dab01d517c,

title = "Low Gilbert damping and high thermal stability of Ru-seeded L10-phase FePd perpendicular magnetic thin films at elevated temperatures",

abstract = "Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by an Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (Ku ∼10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a Ku ∼6.8 Merg/cm3 can be obtained with an annealing temperature of 500 °C. In addition, the Gilbert damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for the as-deposited FePd sample and from 0.006 to 0.012 for the 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices.",

author = "Delin Zhang and Dingbin Huang and Wu, {Ryan J.} and Dustin Lattery and Jinming Liu and Xinjun Wang and Gopman, {Daniel B.} and Mkhoyan, {K. Andre} and Wang, {Jian Ping} and Xiaojia Wang",

note = "Funding Information: This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) No. HR001117S0056-FP-042 “Advanced MTJs for computation in and near random access memory,” by the ASCENT, one of the six centres in JUMP, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by the National Institute of Standards and Technology, and by the Advanced Storage Research Consortium (ASRC). Parts of the work were carried out in the Characterization Facility of the University of Minnesota, which receives partial support from NSF through the MRSEC program (No. DMR-1420013). Publisher Copyright: {\textcopyright} 2020 Author(s).",

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AU - Zhang, Delin

AU - Huang, Dingbin

AU - Wu, Ryan J.

AU - Lattery, Dustin

AU - Liu, Jinming

AU - Wang, Xinjun

AU - Gopman, Daniel B.

AU - Mkhoyan, K. Andre

AU - Wang, Jian Ping

AU - Wang, Xiaojia

N1 - Funding Information: This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) No. HR001117S0056-FP-042 “Advanced MTJs for computation in and near random access memory,” by the ASCENT, one of the six centres in JUMP, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by the National Institute of Standards and Technology, and by the Advanced Storage Research Consortium (ASRC). Parts of the work were carried out in the Characterization Facility of the University of Minnesota, which receives partial support from NSF through the MRSEC program (No. DMR-1420013). Publisher Copyright: © 2020 Author(s).

PY - 2020/8/24

Y1 - 2020/8/24

N2 - Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by an Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (Ku ∼10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a Ku ∼6.8 Merg/cm3 can be obtained with an annealing temperature of 500 °C. In addition, the Gilbert damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for the as-deposited FePd sample and from 0.006 to 0.012 for the 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices.

AB - Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by an Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (Ku ∼10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a Ku ∼6.8 Merg/cm3 can be obtained with an annealing temperature of 500 °C. In addition, the Gilbert damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for the as-deposited FePd sample and from 0.006 to 0.012 for the 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices.

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ER -

Low Gilbert damping and high thermal stability of Ru-seeded L1₀-phase FePd perpendicular magnetic thin films at elevated temperatures

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