Bulk perpendicular magnetic anisotropy materials are proposed to be a promising candidate for next-generation ultrahigh density and ultralow energy-consumption spintronic devices. In this work, we experimentally investigate the structure, thermal stability, and magnetic properties of FePd thin films seeded by an Ru layer. An fcc-phase Ru layer induces the highly-ordered L10-phase FePd thin films with perpendicular magnetic anisotropy (Ku ∼10.1 Merg/cm3). The thermal stability of FePd samples is then studied through the annealing process. It is found that a Ku ∼6.8 Merg/cm3 can be obtained with an annealing temperature of 500 °C. In addition, the Gilbert damping constant α, an important parameter for switching current density, is determined as a function of the testing temperature. We observe that α increases from 0.006 to 0.009 for the as-deposited FePd sample and from 0.006 to 0.012 for the 400 °C-annealed FePd sample as the testing temperature changes from 25 °C to 150 °C. These results suggest that Ru-seeded FePd provides great potential in scaling perpendicular magnetic tunnel junctions below 10 nm for applications in ultralow energy-consumption spintronic devices.
Bibliographical noteFunding Information:
This work was supported in part by the Defense Advanced Research Projects Agency (DARPA) No. HR001117S0056-FP-042 “Advanced MTJs for computation in and near random access memory,” by the ASCENT, one of the six centres in JUMP, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by the National Institute of Standards and Technology, and by the Advanced Storage Research Consortium (ASRC). Parts of the work were carried out in the Characterization Facility of the University of Minnesota, which receives partial support from NSF through the MRSEC program (No. DMR-1420013).