Low-frequency noise in GaAs MESFETs related to backgating effects

A. N. Birbas; B. Brunn; A. D. Van Rheenen; A. Gopinath; C. L. Chen; F. Smith

doi:10.1049/ip-g-2.1991.0033

Low-frequency noise in GaAs MESFETs related to backgating effects

A. N. Birbas, B. Brunn, A. D. Van Rheenen, A. Gopinath, C. L. Chen, F. Smith

Electrical and Computer Engineering

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7 Scopus citations

Abstract

The influence of the backgating effect on low-frequency noise in GaAs MESFETs grown by molecular beam epitaxy is investigated. The low-frequency noise is of the 1/f type superimposed on generation-recombination noise. We show that the backgating effect, although it reduces the current, increases current fluctuations and, hence, noise. Furthermore, it is shown that the incorporation of a low-temperature grown GaAs buffer, by MBE, significantly reduces the sensitivity of the noise level of the device to backgate bias.

Original language	English (US)
Pages (from-to)	175-178
Number of pages	4
Journal	IEE proceedings. Part G. Electronic circuits and systems
Volume	138
Issue number	2
DOIs	https://doi.org/10.1049/ip-g-2.1991.0033
State	Published - 1991

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title = "Low-frequency noise in GaAs MESFETs related to backgating effects",

abstract = "The influence of the backgating effect on low-frequency noise in GaAs MESFETs grown by molecular beam epitaxy is investigated. The low-frequency noise is of the 1/f type superimposed on generation-recombination noise. We show that the backgating effect, although it reduces the current, increases current fluctuations and, hence, noise. Furthermore, it is shown that the incorporation of a low-temperature grown GaAs buffer, by MBE, significantly reduces the sensitivity of the noise level of the device to backgate bias.",

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AU - Birbas, A. N.

AU - Brunn, B.

AU - Van Rheenen, A. D.

AU - Gopinath, A.

AU - Chen, C. L.

AU - Smith, F.

PY - 1991

Y1 - 1991

N2 - The influence of the backgating effect on low-frequency noise in GaAs MESFETs grown by molecular beam epitaxy is investigated. The low-frequency noise is of the 1/f type superimposed on generation-recombination noise. We show that the backgating effect, although it reduces the current, increases current fluctuations and, hence, noise. Furthermore, it is shown that the incorporation of a low-temperature grown GaAs buffer, by MBE, significantly reduces the sensitivity of the noise level of the device to backgate bias.

AB - The influence of the backgating effect on low-frequency noise in GaAs MESFETs grown by molecular beam epitaxy is investigated. The low-frequency noise is of the 1/f type superimposed on generation-recombination noise. We show that the backgating effect, although it reduces the current, increases current fluctuations and, hence, noise. Furthermore, it is shown that the incorporation of a low-temperature grown GaAs buffer, by MBE, significantly reduces the sensitivity of the noise level of the device to backgate bias.

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JO - IEE proceedings. Part G. Electronic circuits and systems

JF - IEE proceedings. Part G. Electronic circuits and systems

IS - 2

ER -

Low-frequency noise in GaAs MESFETs related to backgating effects

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