Low-frequency noise in buried-channel SiGe n-MODFETs

Anuj Madan; John D. Cressler; Steven J. Koester

doi:10.1016/j.sse.2009.04.024

Low-frequency noise in buried-channel SiGe n-MODFETs

Anuj Madan, John D. Cressler, Steven J. Koester

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The low-frequency noise and its spatial origin in strained Si/SiGe n-MODFETs with f_MAX > 200 GHz is investigated for high-performance analog and mixed-signal applications. The dependence of the low-frequency noise response on two major device design parameters (L_G and L_SD) is examined. A stronger dependence of 1/f noise on L_G compared to L_SD is observed. The correlation of drain current noise power spectral density with transconductance suggest carrier number induced fluctuations in the strained silicon channel of SiGe n-MODFETs dominate the noise characteristics. Further investigation of normalized noise spectral density's dependence on gate overdrive voltage confirmed the dominance of carrier number fluctuations in the channel.

Original language	English (US)
Pages (from-to)	901-904
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	8
DOIs	https://doi.org/10.1016/j.sse.2009.04.024
State	Published - Aug 2009

Bibliographical note

Funding Information:
This work was supported by United States Air Force Office of Scientific Research MURI Project, the Defense Threat Reduction Agency, NAVSEA Crane, and IBM.

Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.

Keywords

Carrier number fluctuations
Low-frequency noise
MODFET
Noise spectral density
SiGe

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10.1016/j.sse.2009.04.024

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title = "Low-frequency noise in buried-channel SiGe n-MODFETs",

abstract = "The low-frequency noise and its spatial origin in strained Si/SiGe n-MODFETs with fMAX > 200 GHz is investigated for high-performance analog and mixed-signal applications. The dependence of the low-frequency noise response on two major device design parameters (LG and LSD) is examined. A stronger dependence of 1/f noise on LG compared to LSD is observed. The correlation of drain current noise power spectral density with transconductance suggest carrier number induced fluctuations in the strained silicon channel of SiGe n-MODFETs dominate the noise characteristics. Further investigation of normalized noise spectral density's dependence on gate overdrive voltage confirmed the dominance of carrier number fluctuations in the channel.",

keywords = "Carrier number fluctuations, Low-frequency noise, MODFET, Noise spectral density, SiGe",

author = "Anuj Madan and Cressler, {John D.} and Koester, {Steven J.}",

note = "Funding Information: This work was supported by United States Air Force Office of Scientific Research MURI Project, the Defense Threat Reduction Agency, NAVSEA Crane, and IBM. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

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AU - Cressler, John D.

AU - Koester, Steven J.

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N2 - The low-frequency noise and its spatial origin in strained Si/SiGe n-MODFETs with fMAX > 200 GHz is investigated for high-performance analog and mixed-signal applications. The dependence of the low-frequency noise response on two major device design parameters (LG and LSD) is examined. A stronger dependence of 1/f noise on LG compared to LSD is observed. The correlation of drain current noise power spectral density with transconductance suggest carrier number induced fluctuations in the strained silicon channel of SiGe n-MODFETs dominate the noise characteristics. Further investigation of normalized noise spectral density's dependence on gate overdrive voltage confirmed the dominance of carrier number fluctuations in the channel.

AB - The low-frequency noise and its spatial origin in strained Si/SiGe n-MODFETs with fMAX > 200 GHz is investigated for high-performance analog and mixed-signal applications. The dependence of the low-frequency noise response on two major device design parameters (LG and LSD) is examined. A stronger dependence of 1/f noise on LG compared to LSD is observed. The correlation of drain current noise power spectral density with transconductance suggest carrier number induced fluctuations in the strained silicon channel of SiGe n-MODFETs dominate the noise characteristics. Further investigation of normalized noise spectral density's dependence on gate overdrive voltage confirmed the dominance of carrier number fluctuations in the channel.

KW - Carrier number fluctuations

KW - Low-frequency noise

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KW - Noise spectral density

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Low-frequency noise in buried-channel SiGe n-MODFETs

Abstract

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