Low critical current for spin transfer in magnetic tunnel junctions

Hao Meng, Jianguo Wang, Jian Ping Wang

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2× 106 A cm2) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Ω μ m2. This demonstration opens a window for high-density magnetic random access memory design.

Original languageEnglish (US)
Article number082504
JournalApplied Physics Letters
Issue number8
StatePublished - Mar 3 2006

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