We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2× 106 A cm2) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Ω μ m2. This demonstration opens a window for high-density magnetic random access memory design.
Bibliographical noteFunding Information:
The authors would like to acknowledge the Grant-in-Aid support from Graduate School at University of Minnesota. They are also thankful for the help from Dr. Song Xue, Dr. Eric Granstrom, and Dr. Jenny Gao from Seagate Technology and Dr. Yiming Huai from Grandis, Inc.