Low critical current for spin transfer in magnetic tunnel junctions

Hao Meng; Jianguo Wang; Jian Ping Wang

doi:10.1063/1.2179124

Low critical current for spin transfer in magnetic tunnel junctions

Hao Meng, Jianguo Wang, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2× 106 A cm2) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Ω μ m2. This demonstration opens a window for high-density magnetic random access memory design.

Original language	English (US)
Article number	082504
Journal	Applied Physics Letters
Volume	88
Issue number	8
DOIs	https://doi.org/10.1063/1.2179124
State	Published - 2006

Bibliographical note

Funding Information:
The authors would like to acknowledge the Grant-in-Aid support from Graduate School at University of Minnesota. They are also thankful for the help from Dr. Song Xue, Dr. Eric Granstrom, and Dr. Jenny Gao from Seagate Technology and Dr. Yiming Huai from Grandis, Inc.

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abstract = "We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2× 106 A cm2) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Ω μ m2. This demonstration opens a window for high-density magnetic random access memory design.",

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N2 - We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2× 106 A cm2) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Ω μ m2. This demonstration opens a window for high-density magnetic random access memory design.

AB - We report a novel approach to reduce the critical current density for spin transfer in nanoscale magnetic tunnel junction (MTJ) structures. By integrating a spin valve and a MTJ structure with antiparallel pinned layers, the dc critical switching current density is reduced by one order of magnitude (2× 106 A cm2) at room temperature. The magnetoresistive (MR) properties of the MTJ + spin-valve device are dominated by the MTJ layers. The MR ratio is 15.8% with resistance area product of 4.5 Ω μ m2. This demonstration opens a window for high-density magnetic random access memory design.

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Low critical current for spin transfer in magnetic tunnel junctions

Abstract

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