Long-term stable ion sensitive field effect transistor sensors based on microfluidics induced tunable graphene films

B. Zhang, T. Cui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ion sensitive field effect transistor (ISFET) sensor based on microfluidics induced films is reported in this paper. The graphene film demonstrates controllably tunable thickness different from the conventional graphene composites, and the sensor has a long-term stability in chemical detection. Using capillarity to introduce a graphene suspension solution to a microfluidic system, the graphene film patterns were confined and formed in microchannels. SEM, AFM and Raman spectroscopy were used to analyze the graphene films, demonstrating the tunable thickness of the graphene films in the microchannels. Ambipolar characteristics of the graphene ISFET were also presented. The long-term stability of the ISFET was investigated, and compared with graphene/polymer composites under the same patterning and measurement conditions.

Original languageEnglish (US)
Title of host publication2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
EditorsMehran Mehregany, David J. Monk
PublisherTransducer Research Foundation
Pages2-5
Number of pages4
ISBN (Electronic)9780964002494
DOIs
StatePublished - 2012
Event2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012 - Hilton Head, United States
Duration: Jun 3 2012Jun 7 2012

Publication series

NameTechnical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Other

Other2012 Solid-State Sensors, Actuators and Microsystems Workshop, Hilton Head 2012
CountryUnited States
CityHilton Head
Period6/3/126/7/12

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