Abstract
Possible changes in the long-range disorder in hydrogenated amorphous silicon (a-Si:H) in association with light-induced defect creation (the Staebler-Wronski effect) have been investigated by combining measurements of the thermopower and conductivity activation energy differences with that of the conductance 1/f noise. There is no observed change in the long-ranged disorder after twenty hours exposure to heat-filtered white light for a series of n-type-doped a-Si:H films.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 397-400 |
| Number of pages | 4 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 266-269 A |
| DOIs | |
| State | Published - May 1 2000 |
| Event | 18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States Duration: Aug 23 1999 → Aug 27 1999 |
Bibliographical note
Funding Information:This work was supported by the University of Minnesota, the NSF DMR-9422772 and NREL/AAD-9-18668-13.