Possible changes in the long-range disorder in hydrogenated amorphous silicon (a-Si:H) in association with light-induced defect creation (the Staebler-Wronski effect) have been investigated by combining measurements of the thermopower and conductivity activation energy differences with that of the conductance 1/f noise. There is no observed change in the long-ranged disorder after twenty hours exposure to heat-filtered white light for a series of n-type-doped a-Si:H films.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Non-Crystalline Solids|
|State||Published - May 1 2000|
|Event||18th International Conference on Amorphous and Microcrystalline Semiconductors - Sicence and Technology (ICAMS 18) - Snowbird, UT, United States|
Duration: Aug 23 1999 → Aug 27 1999
Bibliographical noteFunding Information:
This work was supported by the University of Minnesota, the NSF DMR-9422772 and NREL/AAD-9-18668-13.