Abstract
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current at different temperature are used to validity the LogCDO method. The postbreakdown current of MOS device is first equivalent to a double diode circuit model, and then the improved LogCDO method is applied to extract key parameters. The extraction results are consistent very well with the measured data even over a wide range of temperature.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 669-672 |
| Number of pages | 4 |
| Journal | Journal of Computational and Theoretical Nanoscience |
| Volume | 10 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 2013 |
| Externally published | Yes |
Keywords
- Logarithm cofactor difference extrema
- MOS device
- Parameter extraction
- Post-breakdown current