Local interface composition and band offset tuning in ZnSe-GaAs(001) heterostructures

R. Nicolini, L. Vanzetti, Guido Mula, G. Bratina, L. Sorba, A. Mura, J. E. Angelo, W. W. Gerberich, A. Franciosi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.

Original languageEnglish (US)
Title of host publicationGrowth, Processing, and Characterization of Semiconductor Heterostructures
PublisherPubl by Materials Research Society
Pages3-8
Number of pages6
ISBN (Print)1558992251
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume326
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

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