@inproceedings{40468ab284fd410386c05b497109cf55,
title = "Local interface composition and band offset tuning in ZnSe-GaAs(001) heterostructures",
abstract = "ZnSe-GaAs(001) heterostructures have been grown by molecular beam epitaxy and characterized in situ by means of reflection high energy electron diffraction and x-ray photoemission spectroscopy, and ex-situ by near edge photoluminescence spectroscopy and by cross sectional transmission electron microscopy. By changing the Zn/Se flux intensity ratio we were able to control the Zn/Se relative concentration in the interface region, while maintaining a similar structure and high degree of long range order of the interface.",
author = "R. Nicolini and L. Vanzetti and Guido Mula and G. Bratina and L. Sorba and A. Mura and Angelo, {J. E.} and Gerberich, {W. W.} and A. Franciosi",
year = "1994",
language = "English (US)",
isbn = "1558992251",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "3--8",
booktitle = "Growth, Processing, and Characterization of Semiconductor Heterostructures",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 02-12-1993",
}